ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.
AbstractThe processing of light emitting diodes in porous silicon with green/blue electroluminescence spectrum is described. The spectral behavicur and the degradation are investigated. A phenomenological theory for the luminescence is given.
Preferential Orientation of Tetrahedral Silicon-Based Hosts in Phosphorescent Organic Light-Emitting Diodes